입찰공고상세[외자] · 마감 · AI 페이지
유도결합 반응성 식각기 [ICP RIE Inductively Coupled PlasmaReactive Ion Etching]
이 페이지는 공공일감(work.00data.kr)이 입찰공고 「유도결합 반응성 식각기 [ICP RIE Inductively Coupled PlasmaReactive Ion Etching]」을 AI가 읽기 좋게 한 장으로 정리한 글이다.
공고명 · 금액 · 일정은 공공데이터포털 · 조달청 입찰공고 정보 그대로이고, 요약 · 문서 분석 · 발췌는 공공일감이 공고문과 첨부를 읽고 만든 것이다.
이 가공물은 인용할 수 있으며, 인용할 때는 공공일감과 공고 페이지 링크(https://work.00data.kr/projects/R26BK01603869)를 출처로 밝히는 조건이다. 베타 기간 무료.
2026-10-13 16:33 KST 기준 · 최종 확인은 나라장터 원문을 따른다.
공고 정보: 공공데이터포털 · 조달청 입찰공고 정보 · 요약 · 분석: 공공일감이 공고문과 첨부를 읽고 정리
링크
비슷한 공고
링크는 각 공고의 AI 페이지다.
진행 중
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끝난 공고 · 결과
- 유도결합 반응성 식각기 [ICP RIE Inductively Coupled PlasmaReactive Ion Etching] · 한국과학기술원 · 낙찰 -
- 이온 빔 밀링시스템 [Ion Beam Etching System 1set] · 한국과학기술원 · 유찰
- 2026년도 국립경국대학교 고가첨단기자재(반도체 플라즈마 공정장비) 구입 · 국립경국대학교 · 낙찰 주식회사 퍼블 · 2.43억원
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- 플라즈마 기반 반도체 패키징용 식각장치_첨단산업특성화대학원지원(반도체) · 한양대학교 산학협력단 · 유찰
첨부파일
뷰어 링크는 사람이 원문을 볼 때 쓰는 화면이다. 이 문서들에서 뽑은 자격 · 배점 · 일정 · 발췌는 이 페이지 아래에 글로 있다.
공고 개요
외자 · 유찰 · 한국과학기술원 · 반도체·박막 공정장비
- 결과
- 유찰
- 참가
- 0곳 · 개찰 07/07(화)
요약 AI 요약
정밀 양자소자 구조 식각 및 나노패터닝을 위해 유도결합 반응성 식각기(ICP-RIE) 1세트를 구매하는 사업입니다. 양자정보 및 컴퓨팅 소자의 정밀 가공과 물질 맞춤형 식각을 목적으로 합니다.
- 알루미늄 공정 챔버 및 제어 랙, PC 및 모니터 포함 시스템
- 3kW ICP 식각 소스 및 RF/LF 플라즈마 바이어스 키트
- 영하 150도에서 영상 400도까지 조절 가능한 극저온 냉각 및 전기 가열 하부 전극
- 자동 온도 전환 장치 및 원격 제어 히터/칠러
- 유해 및 비유해 가스 라인과 질량 유량 제어기(MFC)
- 터보 분자 펌프, 드라이 펌프 및 단일 로드락 챔버
참가 자격 · 제한
- 업종제한
- 제한 없음
- 지역제한
- 제한 없음
- 공동수급
- 공동수급불허
- 입찰참가 제한
- 모름
- 실적경쟁 · PQ
- 모름
- 국제입찰
- 국제입찰
- 제출 방법
- 직찰/우편/상시
입찰 일정
| 진행 | 일시 | 남은 날 |
|---|---|---|
| 공고 게시 | 06/26(금) | 지남 |
| 개찰 | 07/07(화) 18:00 | 지남 |
가격
- 예정가격 방식
- 비예가
납품
- 품명
- 웨이퍼식각기 (2321118001)
- 인도조건
- 모름
- 제조물품
- 모름
- 세부품명 등록
- 모름
공고 정보
- 공고종류
- 등록공고 (일반공고)
- 게시일
- 06/26(금)
- 공고번호
- R26BK01603869-000
- 참조번호
- -
- 공고기관
- 한국과학기술원
- 수요기관
- 한국과학기술원
- 계약방법
- 일반경쟁
- 낙찰방법
- 2단계경쟁입찰
- 계약유형
- 총액계약
- 예정가격 방식
- 비예가
- 추정가격
- -
- 배정예산
- -
- 사전규격번호
- R26BD00240782
- 재공고
- 아니오
- 출처
- 나라장터
문서 발췌
| 구 매 규 격 서 [ COMMODITY DESCRIPTION ] | ||||
|---|---|---|---|---|
| 품목번호 Item No. | 관세분류번호 HSK No. | 정부물품분류번 호 | 수량 Q'ty | 단위 Unit |
| 1 | 8486.20-8410 | 23211180 | 1 | set |
| Ⅰ .용 도(End-user's Use) ○ 정밀 양자소자 구조 식각 및 나노패터닝 - 양자상태 제어 및 광자 경로 설계를 위한 광집적회로 기반 양자정보/컴퓨팅소자 정밀 식각 및 구조 구현 - 초전도 큐비트, 양자점, 이온트랩 기반 양자소자의 정밀 식각 공정 및 나노스케일 가공을 위한 ICP-RIE 기반 플라즈마 식각 기술 활용 - Si(Silicon) , SiO2(Silicon Oxide) , LN(Lithium Niobate), 물질 맞춤형 식각 장비 | ||||
| Ⅱ. Configurations of Goods (구매대상 물품의 전체 내역) 1. ICP etch system - Aluminium process chamber includes a single viewport fitted with a RF shield for viewing the plasma and an additional blanked port for OES end-point detection or other characterisation tool. The process module frame and separate control rack contain all the electronics subsystems including the RF generators. Service connection points are provided for compressed air, LN2 or fluid for substrate temperature control, cooling water, process gases, vent N2 gas and exhaust to pump system. 2. PC & 22" monitor - A modern specification PC including 22" monitor, keyboard, mouse and all relevant cards. Software includes Windows operating system, control software and single-user licence. 3. 208V 60Hz 3phase supply configuration - System configured for 208V 60Hz 5 wire 3P + N + E mains supply. 4. Chamber right hand build configuration - Build configured with OEM components mounted from right hand side of chamber frame when viewed from chamber loadlock / handler. 5. RF 600W plasma bias kit - Plasma bias control for etch processing, driven by 600W 13.56MHz RF generator connected to lower electrode via an vacuum capacitor automatch unit. 6. 3kW ICP etch source |
- Inductively Coupled Plasma source for etch processing, driven by a 5kW 2MHz RF generator (restricted to 3kW) connected via an vacuum capacitor automatic matching unit. The ICP source is 300mm diameter and includes a laser endpoint detector port and mounting. 7. LF 300W plasma bias kit - Plasma bias control for etch processing, driven by 300W 350kHz LF generator connected to lower electrode via vacuum capacitor automatch unit. 8. Active spacer for ICP source - Active spacer for enhanced uniformity control across large area substrates. 9. Gas dispersion plate for ICP plasma source - Gas dispersion plate fitted to the ICP source gas entry, the dispersion plate is used to improve uniformity for Si etch processes.
10. W afer clamping and helium backing kit - Wafer clamping and helium backing for lower electrode. Helium assisted heat transfer that promotes heat transfer between the wafer and the lower electrode. Mechanical wafer clamping integrated into wafer transfer control with adjustable clamping force. 11. Cryo-cooled / electrically-heated etch lower electrode kit - 240mm diameter aluminium lower electrode LN2 cryo cooled and electrically heated with a temperature range of -150°C to +400°C, automatically switching between LN2 cooling and electrically heating modes. Features an axial lifting mechanism for wafers and platens up to 200mm diameter. The electrode is fixed height with an integral dark space shield. Suitable for use with RF bias powers up to 600W maximum.
12. Quartz clamp with continuous contact - 200mm wafer - Clamp for 200mm wafer with circular substrate profile. 13. LN2 / Fluid / Heat Auto Changeover Unit - The automatic changeover unit is used to automatically switch between lower electrode cryo (LN2 cooling and electrical heating) mode and chillier fluid temperature control mode. 14. SMC HRZ010-W1 heater/chiller Remotely controlled water cooled recirculating heater/chiller unit suitable for electrode temperature control, with secondary reservoir for fluid recovery function. 10 kW Cooling capacity at 20°C. UL and Semi S2 approved. 15. Close coupled gas pod mounted on the ICP source - The close coupled gas pod, mounted above the ICP source, is ventilated and fitted with an extraction port for maximum safety. Positions are provided for up to 5 mass flow controlled gas lines, and those configured with mass flow controllers include the control pneumatics and circuitry.
16. Standard Gas Pod externally mounted (8 lines max) The gas pod is ventilated and fitted with an extraction port for maximum safety. Positions are provided for up to 8 mass flow-controlled gas lines, and those configured with mass flow controllers include the control pneumatics and circuitry. Fixing points are provided for wall mounting. 17. Gas pod support frame, free-standing Support frame with floor fixing holes for free-standing location of gas pod. 18. 1x By-passed gasline and MFC for hazardous gases - Gas line for hazardous gases, with metal sealed digital mass flow controller, mounted in external gaspod. The line has stainless steel VCR fittings and orbitally welded joints, including two electro-pneumatic isolation valves, one in-line 2μm filter and a bypass line. For use with toxic, flammable and pyrophoric gases.
19. 6x Standard gasline and MFC for non-hazardous gases - Gas line for non-hazardous gases, with elastomer sealed digital mass flow controller, mounted in external gaspod. The line has stainless steel VCR fittings and orbitally welded joints, including one electro-pneumatic isolation valve and one in-line 2μm filter. For use with non-toxic, non-flammable, non-pyrophoric gases only. 20. 3x Close-coupled gasline and MFC for non-hazardous gases - Gas line for non-hazardous gases, with elastomer sealed digital mass flow controller, mounted in close-coupled gaspod. The line has stainless steel VCR fittings and orbitally welded joints, including one electro-pneumatic isolation valve and one in-line 2μm filter. For use with non-toxic, non-flammable, non-pyrophoric gases only.
21. 250mT CM gauge - 250 mTorr capacitance manometer gauge used for process pressure measurement. Temperature controlled for improved stability and repeatability. Pressure read-back in mTorr. 22. Pumping Foreline Heating Kit - Electrical heating kit for warming internal foreline pipework to minimise process deposition. Maximum temperature 80°C. 23. Adixen ATH1600MT turbo, APC & heated backing valve kit - Corrosive compatible, magnetic bearing 1360 l/s turbomolecular pump including integration kit for use on a process chamber. Heated turbo backing valve. VAT automatic pressure control valve for pressure control and chamber isolation.
| 24. Chamber and pump down pipe Heating Kit - Electrical heating kit to warm the chamber and pump down pipework, minimising process deposition. Maximum temperature 60°C. The kit includes heat shields. 25. Pfeiffer A124H ELT pump kit - 110 m3/h at 60Hz (95 m3/h at 50Hz) dry pump for process chamber backing. Extended Low Temperature version, recommended for all applications requiring the pump and gas temperature to be as low as possible to avoid any by-product deposition inside the pump. Features N2 purge facilities with standby mode for reduced running cost, software remote control with status monitoring and water cooling for precise temperature management. Includes hardware to integrate the pump to the system process chamber, with flexible tubing (1m). 26. Floor Fixing Brackets - Set of fixing brackets enabling the system to be secured to the floor. 27. Single loadlock chamber - Loadlock for up to 200mm diameter single wafer or batch carrier platen operation. Substrates are loaded directly onto the wafer transfer arm via a hinged lid. Transfer isolation valve fitted between the loadlock and the process chamber. Substrates can be transferred under vacuum into the single process chamber. Includes a sensor to monitor the wafer transfer status (minimum detectable single wafer size of 100mm) 28. Loadlock soft vent kit - Allows for gradual loadlock venting in order to prevent wafer movement and minimise particle generation. 29. Loadlock soft pump kit - Allows for gradual loadlock pumping in order to prevent wafer movement and minimise particle generation. 30. Pfeiffer ACP15G dry pump kit - 14 m3/h dry pump for loadlock backing. Includes hardware to integrate the pump to the system loadlock, with flexible tubing (1m). 31. Roughing isolation valve kit for loadlock - Loadlock roughing isolation valve for integration with dry pump. | |
|---|---|
| Ⅲ.Performance& Specification < Performance> 1. LiNbO3 | |
| Process Specification | 1) Lithium niobate on insulator (LNOI) etching |
| Etched material | LiNbO3 |
| Substrate specification | SEMI standard Si |
| Wafer size | Piece up to 150mm |
| Feature size/type | 50 -3000 nm wide waveguides 1-99% exposed area |
| Etch depth | 10 - 1000 nm |
| Etch rate | 20 - 50 nm/min |
| Selectivity to mask | 0.5:1 - 2:1 (LN: HSQ type (Fox-16) using Ar-O2 plasma |
| Profile | 60° - 80° |
| Within wafer uniformity | <±5% |
| Aspect ratio 0.1 - 0.5: 1 |
| 2.SiO2 | ||
|---|---|---|
| Process Specification | 2) SiO2 etching | |
| Etched material | SiO2 | |
| Substrate specification | Si, SiO2, quartz | |
| Wafer size | Piece up to 200mm | |
| Feature size/type | 50 -3000 nm wide waveguides 1-99% exposed area | |
| Etch depth | 10 nm – 5000 nm | |
| Etch rate | 50 - 300 nm/min | |
| Selectivity to mask | Up to 1.0:1 (PR) (1) | |
| Profile | 70° - 90° (2) | |
| Within wafer uniformity | <±5% | |
| Aspect ratio 0.1 - 5:1 3. Bosch Si Etch | ||
| Process Specification | 3) Bosch Si Etch | |
| Etched material | Bulk Si | |
| Substrate specification | SEMI standard silicon substrate | |
| Wafer size | Up to 200mm (with 5% Si exposed area) | |
| Feature size/type | 50μm/Trench | |
| Etch depth | 50μm | |
| Etch rate | >10μm/min | |
| Selectivity to mask | >100:1(PR); >200:1(SiO2) | |
| Profile | 90±1° (Mask profile >87°) | |
| Within wafer uniformity | <±5% at 7mm edge exclusion to clamp edge | |
| Run-to-run uniformity | <±3% | |
| Scallop size (peak to peak) <350nm (SEM cross-section measurement) 4. Cryogenc Si Etch | ||
| Process Specification | 4) Cryogenic Si Etch | |
| Etched material | Bulk Si | |
| Substrate specification | SEMI standard silicon substrate | |
| Wafer size | Up to 200mm (with 5% Si exposed area) | |
| Feature size/type | 10μm/Trench | |
| Etch depth | 25μm | |
| Etch rate | >2μm/min | |
| Selectivity to mask | >40:1(PR); >100:1(SiO2) | |
| Profile | 90±1° (Mask profile >87°) | |
| Within wafer uniformity | <±5% at 7mm edge exclusion to clamp edge | |
| Run-To-Run Uniformity | <±3% | |
| Sidewall roughness <5nm (SEM cross-section measurement) | ||
| Ⅳ. 관련법령에 따른 필수 면허‧자격 사항(Compulsory Licenses and Qulifications required by relevant laws or regulations) | ||
| Ⅴ. 기타 조건(Remarks) 1.납기 Delivery:발주 후 11개월 이내 2.선적조건 :FCA ,제조사 공장 2.보증 Warranty:설치 후 12개월 3.대금지급조건 :50% onorder(Net30)/40% ondelivery(Net30)/ 10% onacceptance(Net30) |
| 구 매 규 격 서 [ COMMODITY DESCRIPTION ] | ||||
|---|---|---|---|---|
| 품목번호 Item No. | 관세분류번호 HSK No. | 정부물품분류번 호 | 수량 Q'ty | 단위 Unit |
| 1 | 8486.20-8410 | 23211180 | 1 | set |
| Ⅰ .용 도(End-user's Use) ○ 정밀 양자소자 구조 식각 및 나노패터닝 - 양자상태 제어 및 광자 경로 설계를 위한 광집적회로 기반 양자정보/컴퓨팅소자 정밀 식각 및 구조 구현 - 초전도 큐비트, 양자점, 이온트랩 기반 양자소자의 정밀 식각 공정 및 나노스케일 가공을 위한 ICP-RIE 기반 플라즈마 식각 기술 활용 - Si(Silicon) , SiO2(Silicon Oxide) , LN(Lithium Niobate), 물질 맞춤형 식각 장비 | ||||
| Ⅱ. Configurations of Goods (구매대상 물품의 전체 내역) 1. ICP etch system - Aluminium process chamber includes a single viewport fitted with a RF shield for viewing the plasma and an additional blanked port for OES end-point detection or other characterisation tool. The process module frame and separate control rack contain all the electronics subsystems including the RF generators. Service connection points are provided for compressed air, LN2 or fluid for substrate temperature control, cooling water, process gases, vent N2 gas and exhaust to pump system. 2. PC & 22" monitor - A modern specification PC including 22" monitor, keyboard, mouse and all relevant cards. Software includes Windows operating system, control software and single-user licence. 3. 208V 60Hz 3phase supply configuration - System configured for 208V 60Hz 5 wire 3P + N + E mains supply. 4. Chamber right hand build configuration - Build configured with OEM components mounted from right hand side of chamber frame when viewed from chamber loadlock / handler. 5. RF 600W plasma bias kit - Plasma bias control for etch processing, driven by 600W 13.56MHz RF generator connected to lower electrode via an vacuum capacitor automatch unit. |
4/6 6. 3kW ICP etch source - Inductively Coupled Plasma source for etch processing, driven by a 5kW 2MHz RF generator (restricted to 3kW) connected via an vacuum capacitor automatic matching unit. The ICP source is 300mm diameter and includes a laser endpoint detector port and mounting. 7. LF 300W plasma bias kit - Plasma bias control for etch processing, driven by 300W 350kHz LF generator connected to lower electrode via vacuum capacitor automatch unit. 8. Active spacer for ICP source - Active spacer for enhanced uniformity control across large area substrates. 9. Gas dispersion plate for ICP plasma source - Gas dispersion plate fitted to the ICP source gas entry, the dispersion plate is used to improve uniformity for Si etch processes.
10. W afer clamping and helium backing kit - Wafer clamping and helium backing for lower electrode. Helium assisted heat transfer that promotes heat transfer between the wafer and the lower electrode. Mechanical wafer clamping integrated into wafer transfer control with adjustable clamping force. 11. Cryo-cooled / electrically-heated etch lower electrode kit - 240mm diameter aluminium lower electrode LN2 cryo cooled and electrically heated with a temperature range of -150°C to +400°C, automatically switching between LN2 cooling and electrically heating modes. Features an axial lifting mechanism for wafers and platens up to 200mm diameter. The electrode is fixed height with an integral dark space shield. Suitable for use with RF bias powers up to 600W maximum.
12. Quartz clamp with continuous contact - 200mm wafer - Clamp for 200mm wafer with circular substrate profile. 13. LN2 / Fluid / Heat Auto Changeover Unit - The automatic changeover unit is used to automatically switch between lower electrode cryo (LN2 cooling and electrical heating) mode and chillier fluid temperature control mode. 14. SMC HRZ010-W1 heater/chiller Remotely controlled water cooled recirculating heater/chiller unit suitable for electrode temperature control, with secondary reservoir for fluid recovery function. 10 kW Cooling capacity at 20°C. UL and Semi S2 approved. 5/6 15. Close coupled gas pod mounted on the ICP source - The close coupled gas pod, mounted above the ICP source, is ventilated and fitted with an extraction port for maximum safety. Positions are provided for up to 5 mass flow controlled gas lines, and those configured with mass flow controllers include the control pneumatics and circuitry.
16. Standard Gas Pod externally mounted (8 lines max) The gas pod is ventilated and fitted with an extraction port for maximum safety. Positions are provided for up to 8 mass flow-controlled gas lines, and those configured with mass flow controllers include the control pneumatics and circuitry. Fixing points are provided for wall mounting. 17. Gas pod support frame, free-standing Support frame with floor fixing holes for free-standing location of gas pod. 18. 1x By-passed gasline and MFC for hazardous gases - Gas line for hazardous gases, with metal sealed digital mass flow controller, mounted in external gaspod. The line has stainless steel VCR fittings and orbitally welded joints, including two electro-pneumatic isolation valves, one in-line 2μm filter and a bypass line. For use with toxic, flammable and pyrophoric gases.
19. 6x Standard gasline and MFC for non-hazardous gases - Gas line for non-hazardous gases, with elastomer sealed digital mass flow controller, mounted in external gaspod. The line has stainless steel VCR fittings and orbitally welded joints, including one electro-pneumatic isolation valve and one in-line 2μm filter. For use with non-toxic, non-flammable, non-pyrophoric gases only. 20. 3x Close-coupled gasline and MFC for non-hazardous gases - Gas line for non-hazardous gases, with elastomer sealed digital mass flow controller, mounted in close-coupled gaspod. The line has stainless steel VCR fittings and orbitally welded joints, including one electro-pneumatic isolation valve and one in-line 2μm filter. For use with non-toxic, non-flammable, non-pyrophoric gases only.
21. 250mT CM gauge - 250 mTorr capacitance manometer gauge used for process pressure measurement. Temperature controlled for improved stability and repeatability. Pressure read-back in mTorr. 22. Pumping Foreline Heating Kit - Electrical heating kit for warming internal foreline pipework to minimise process deposition. 6/6 Maximum temperature 80°C. 23. Adixen ATH1600MT turbo, APC & heated backing valve kit - Corrosive compatible, magnetic bearing 1360 l/s turbomolecular pump including integration kit for use on a process chamber. Heated turbo backing valve. VAT automatic pressure control valve for pressure control and chamber isolation. 24. Chamber and pump down pipe Heating Kit - Electrical heating kit to warm the chamber and pump down pipework, minimising process deposition. Maximum temperature 60°C. The kit includes heat shields.
25. Pfeiffer A124H ELT pump kit - 110 m3/h at 60Hz (95 m3/h at 50Hz) dry pump for process chamber backing. Extended Low Temperature version, recommended for all applications requiring the pump and gas temperature to be as low as possible to avoid any by-product deposition inside the pump. Features N2 purge facilities with standby mode for reduced running cost, software remote control with status monitoring and water cooling for precise temperature management. Includes hardware to integrate the pump to the system process chamber, with flexible tubing (1m). 26. Floor Fixing Brackets - Set of fixing brackets enabling the system to be secured to the floor. 27. Single loadlock chamber - Loadlock for up to 200mm diameter single wafer or batch carrier platen operation. Substrates are loaded directly onto the wafer transfer arm via a hinged lid. Transfer isolation valve fitted between the loadlock and the process chamber. Substrates can be transferred under vacuum into the single process chamber. Includes a sensor to monitor the wafer transfer status (minimum detectable single wafer size of 100mm)
28. Loadlock soft vent kit - Allows for gradual loadlock venting in order to prevent wafer movement and minimise particle generation. 29. Loadlock soft pump kit - Allows for gradual loadlock pumping in order to prevent wafer movement and minimise particle generation. 30. Pfeiffer ACP15G dry pump kit - 14 m3/h dry pump for loadlock backing. Includes hardware to integrate the pump to the system loadlock, with flexible tubing (1m). 31. Roughing isolation valve kit for loadlock - Loadlock roughing isolation valve for integration with dry pump. 7/6
| Ⅲ.Performance& Specification < Performance> 1. LiNbO3 | ||
|---|---|---|
| Process Specification | 1) Lithium niobate on insulator (LNOI) etching | |
| Etched material | LiNbO3 | |
| Substrate specification | SEMI standard Si | |
| Wafer size | Piece up to 150mm | |
| Feature size/type | 50 -3000 nm wide waveguides 1-99% exposed area | |
| Etch depth | 10 - 1000 nm | |
| Etch rate | 20 - 50 nm/min | |
| Selectivity to mask | 0.5:1 - 2:1 (LN: HSQ type (Fox-16) using Ar-O2 plasma | |
| Profile | 60° - 80° | |
| Within wafer uniformity | <±5% | |
| Aspect ratio 0.1 - 0.5: 1 2.SiO2 | ||
| Process Specification | 2) SiO2 etching | |
| Etched material | SiO2 | |
| Substrate specification | Si, SiO2, quartz | |
| Wafer size | Piece up to 200mm | |
| Feature size/type | 50 -3000 nm wide waveguides 1-99% exposed area | |
| Etch depth | 10 nm – 5000 nm | |
| Etch rate | 50 - 300 nm/min | |
| Selectivity to mask | Up to 1.0:1 (PR) (1) | |
| Profile | 70° - 90° (2) | |
| Within wafer uniformity | <±5% | |
| Aspect ratio 0.1 - 5:1 3. Bosch Si Etch | ||
| Process Specification | 3) Bosch Si Etch | |
| Etched material | Bulk Si | |
| Substrate specification | SEMI standard silicon substrate | |
| Wafer size | Up to 200mm (with 5% Si exposed area) | |
| Feature size/type | 50μm/Trench | |
| Etch depth | 50μm | |
| Etch rate | >10μm/min | |
| Selectivity to mask | >100:1(PR); >200:1(SiO2) | |
| Profile | 90±1° (Mask profile >87°) | |
| Within wafer uniformity | <±5% at 7mm edge exclusion to clamp edge | |
| Run-to-run uniformity | <±3% | |
| Scallop size (peak to peak) <350nm (SEM cross-section measurement) 4. Cryogenc Si Etch | ||
| Process Specification | 4) Cryogenic Si Etch | |
| Etched material | Bulk Si | |
| Substrate specification | SEMI standard silicon substrate | |
| Wafer size | Up to 200mm (with 5% Si exposed area) | |
| Feature size/type | 10μm/Trench | |
| Etch depth | 25μm | |
| Etch rate | >2μm/min | |
| Selectivity to mask | >40:1(PR); >100:1(SiO2) | |
| Profile | 90±1° (Mask profile >87°) | |
| Within wafer uniformity | <±5% at 7mm edge exclusion to clamp edge | |
| Run-To-Run Uniformity | <±3% | |
| Sidewall roughness <5nm (SEM cross-section measurement) | ||
| Ⅳ. 관련법령에 따른 필수 면허‧자격 사항(Compulsory Licenses and Qulifications required by relevant laws or regulations) |
8/6 Ⅴ. 기타 조건(Remarks) 1.납기 Delivery:발주 후 11개월 이내 2.선적조건 :FCA ,제조사 공장 2.보증 Warranty:설치 후 12개월 3.대금지급조건 :50% onorder(Net30)/40% ondelivery(Net30)/
10% onacceptance(Net30)
9/6